| PART |
Description |
Maker |
| 1FHAX484-715G 1FGA503-638G 1FHAX144-715G 1FGAX600- |
484 POS 1MM BGA EXT. ADAPTER BGA484, IC SOCKET
503 POS 1.27MM BGA ADAPTER BGA503, IC SOCKET
144 POS 1MM BGA EXT. ADAPTER BGA144, IC SOCKET
600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET
BGA521, IC SOCKET
BGA928, IC SOCKET
624 POS 1.27MM BGA ADAPTER
BGA665, IC SOCKET
BGA308, IC SOCKET
BGA824, IC SOCKET
BGA409, IC SOCKET
BGA1225, IC SOCKET
BGA233, IC SOCKET
BGA408, IC SOCKET
BGA84, IC SOCKET
BGA153, IC SOCKET
BGA404, IC SOCKET
BGA169, IC SOCKET
BGA644, IC SOCKET
|
Advanced Interconnections, Corp.
ADVANCED INTERCONNECTIONS CORP
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC405GP-3BE266C IBM25PPC405GP-3EE200C IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|413PIN|PLASTIC
MICROPROCESSOR|32-BIT|CMOS|BGA|456PIN|PLASTIC 微处理器| 32位|的CMOS | BGA封装| 456PIN |塑料
|
Jameco Electronics
Mitel Networks, Corp.
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
| FW80321M600SL6R3 FW80321M400SL6R2 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
| IS61NVP51236-250B2I IS61NVP102418-250B2I IS61NVP10 |
512K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
|
Integrated Silicon Solution, Inc.
|
|
